FDMA2002NZ Datasheet Text
MOSFET
- Dual, N-Channel, POWERTRENCH)
30 V, 2.9 A, 123 mW
FDMA2002NZ
General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra- portable applications. It Features two independent N- Channel MOSFETs with low on- state resistance for minimum conduction losses. The MicroFETt 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
- 2.9 A, 30 V
RDS(on) = 123 mW at VGS = 4.5 V RDS(on) = 140 mW at VGS = 3.0 V RDS(on) = 163 mW at VGS = 2.5 V
- Low Profile
- 0.8 mm Maximum
- In the New Package MicroFET
2x2 mm
- HBM ESD Protection Level > 1.8 kV (Note 3)
- Free from Halogenated pounds and Antimony Oxides
- This Device is Pb- Free, Halide Free and is RoHS pliant
DATA SHEET .onsemi.
VDS 30 V
RDS(on) MAX 123 mW @ 4.5 V 140 mW @ 3.0 V 163 mW @ 2.5 V
ID MAX 2.9 A
Pin 1 S1 G1
D1
D2
D2
D1 G2 S2
WDFN6 2x2, 0.65P (MicroFET 2x2) CASE 511DA
MARKING DIAGRAM
&Z&2&K 002
&Z = Assembly Plant Code &2 = 2- Digit Date Code &K = 2- Digits Lot Run Traceability Code 002 = Device Code
PIN CONNECTIONS
S1 1 G1 2 D2 3...
