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MOSFET – Dual, N-Channel, POWERTRENCH)
30 V, 2.9 A, 123 mW
FDMA2002NZ
General Description This device is designed specifically as a single package solution
for dual switching requirements in cellular handset and other ultra−portable applications. It features two independent N−Channel MOSFETs with low on−state resistance for minimum conduction losses. The MicroFETt 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
Features
• 2.9 A, 30 V
RDS(on) = 123 mW at VGS = 4.5 V RDS(on) = 140 mW at VGS = 3.0 V RDS(on) = 163 mW at VGS = 2.5 V
• Low Profile − 0.8 mm Maximum − In the New Package MicroFET
2x2 mm
• HBM ESD Protection Level > 1.
FDMA2002NZ Datasheet
